GMT-X Explained Further

After so many detailed explanations. I would like to wrap up the GMT (Gated Monolithic Tunneling). Even though, design principle was clear. Implementation was not that easy. Trying to gate the source so that the heat carrying electrons can be removed even at lower temperatures was critical. The gating should allow electrons to pass but not the phonons. In the meanwhile trying to collect the electrons below the gate posed connection problems and blocked the gate signal. After so many iterations. I concluded the design. The most valuable part of the final design is that it can be mass produced using already available technologies. Even though it looks complex with so many layers stacked on top of each other, the design has some room for imperfections.

GMT is formed using billions of parallel tunneling paths. As a result, any imperfection just lowers the thruput and not halt the operation like in chips. This architecture allows for a 'High-Yield' manufacturing process, where local defects do not result in total device failure. Even though it requires high switching speeds of 10GHz, the system has tolerance for frequency shifts. By integrating the energy conversion stage into the monolithic structure, the losses are minimized. Pulsed current harvesting allows very efficient and compact voltage transformation inside the module. GMT module allows high voltage low current output to reduce the off-module connection losses even further.

The integrated high switching circuitry reduces electric losses and reduces EMI radiation. The integrated Copper busbar cage acts as a Faraday Shield, containing the 10 GHz switching noise within the monolithic envelope to ensure zero interference with external electronics.

The critical tunneling section is supported by strong Aluminum Oxide nano structures. This helps perfect SWCNT growth and keeps SWCNT from buckling. As a result, GMT module is mechanically protected against vibrations and shocks; thermally protected both inside and internally against high temperatures and electrically isolated internally and externally and finally EMF shielded.

GMT would be controlled by applying the critical voltage to its gate. Removal of this voltage turns off the system. The response time of the GMT to gate voltage would be less a nano second.